Impact of Gd-doped on optoelectronic properties of SnO2 thin films synthesized by spin coating method
Year: 2024
Type: article
Abstract: Pure and various concentrations of Gd-doped SnO 2 thin films were synthesized using a spin coating method on a glass substrate . XRD studies revealed that all the thin films exhibited polycrystalline tetragonal structures with a fundamental orientation peak along the (110) direction. The three main E g , A 1g , and B 2g vibrational modes were identified using Raman spectroscopy . XPS studies determined the oxidation states of Sn, Gd , and O. Pure SnO 2 has an average optical transmittance of 83 % and it reduced significantly with Gd-doping and reached 55 % in the case of a 5-at% Gd-doped film. The optical band gap energy of 4.01 eV was found in pure SnO 2 and decreased with the Gd doping, reaching 3.88 eV in a 5-at% Gd-doped SnO 2 film. The 3 at% Gd: SnO 2 and pure SnO 2 films were shown the lowest sheet resistance ( R sh ) of 33.1 Ω/Sq highest figure of merit (φ) of 2.26 × 10 −3 Ω −1 , respectively among others.
Source: Physica B Condensed Matter
Authors: Harish Sharma Akkera, Yathish Kumar, Paramita Sarkar, Nagaiah Kambhala, G. Srinivas Reddy
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,160
Funder: Indian Institute of Science
OpenAlex ID: W4405175750