The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs
Year: 2024
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Using 5 commonly employed precursors for Zn 2+ cations, ZnSO 4, ZnI 2, ZnCl 2, Zn(NO 3 ) 2, and Zn(CH 3 COO) 2, we demonstrate the effect of counterions on ZnS thin film formation. We show that both film nucleation and growth stages are strongly dependent on the Zn 2+ precursor type. We systematically studied the mechanisms of thin film deposition on GaAs(100), including solution–substrate interactions, Zn 2+ ion adsorption on the substrate, and nuclei formation as well as stress accumulation during film growth. It was shown that the early stages of film formation play a key role in the subsequent growth kinetics and resulting film quality. X-ray photoelectron spectroscopy, supported by contact angle measurements, transmission electron microscopy, and energy-dispersive spectroscopy showed that increasing the degree of surface oxidation and passivation at the early stages of ZnS film formation inhibits solution desorption. Finally, the previously reported mechanism of crack formation is explored through an interrupted growth series of ZnS films deposited from solutions with different Zn 2+ precursors.
Source: Inorganic Chemistry
Authors: Noy Zakay, Shlomo Rand, Alexander Rashkovskiy, Nitzan Maman, Vladimir Ezersky, Yuval Golan
Institution: Ben-Gurion University of the Negev
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Award: G4318666989
OpenAlex ID: W4405287401