Improving the Antioxidant Properties of Tin-Based Perovskite for the Enhanced Performance of Near-Infrared Light-Emitting Diodes Through the Synergy of Sn and SnF2

Year: 2024

Type: article

Abstract: Tin-based perovskite has emerged as an excellent luminescent material due to its non-toxicity and narrow bandgap compared to lead-based perovskite. However, its tin ions are easily oxidized by oxygen, which leads to increased vacancy defects and poor crystallinity, presenting a significant challenge in obtaining high-quality perovskite films. In this context, we introduced an approach by synergistically adding SnF2 and tin powder into the precursor solution to enhance the antioxidation of Sn ions. This method effectively improved the crystallinity of the perovskite films, reduced the density of defect states, and enhanced the photoluminescence performance of the films. Based on these findings, we successfully fabricated tin-based near-infrared perovskite light-emitting diodes (PeLEDs). With a 20% improvement in the Sn2+ content in the film, we achieved a threefold increase in the external quantum efficiency of the devices, reaching 3.6%.

Source: Materials

DOI: 10.3390/ma17246059

Authors: Yipeng Shen, Jianan Chen, Yuhan Si, Zhengguo Xiao, Kai Kang, Zhaobing Tang, Jing Wang, Chaoyu Xiang

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Ningbo Institute of Industrial Technology, University of Nottingham Ningbo China, Henan Academy of Sciences

Language: English

Topic: Perovskite Materials and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,955

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province

OpenAlex ID: W4405294071