Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor Employing Dual-Gate
Year: 2024
Type: article
Institutions: Technische Universität Berlin, Ferdinand-Braun-Institut
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W4405304105
