Work

Study on the Breakdown Characteristics of SiC LDMOS with P-Upper Region

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779636

Authors: Huijuan Li, Zaixing Wang, Huayi Peng, Bolin Liu, Bingqi Wang

Institution: Lanzhou Jiaotong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4405304357

FWCI:

Cites: 10

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Related to: 10