Work

Improvement of Dynamic Characteristic of the Etched JTE for 10kV 4H-SiC FID

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779759

Authors: Mingyang Wang, Hongbin Pu, Zhao Zhang, Hongwei Zhang, Haonan Tu, Xuhao Lei

Institution: Xi'an University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G8405918825

OpenAlex ID: W4405304367

FWCI:

Cites: 16

Cited by:

Related to: 10