Work

Optimizing the Breakdown Voltage and Specific on-Resistance of SOI LDMOS with an Inverted T-Shaped Oxide Trench and Highly Doped P/N Columns

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779826

Authors: Shijun Wang, Yanmei Shi

Institution: Tianjin University of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4405304928

FWCI: 0.806

Cites: 15

Cited by: 1

Related to: 10