Work

Design and Compromise of RC-IGBT with High Voltage to Suppress Snapback

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779787

Authors: Shiguang Shang, Xinkai Chen, Zhiming Shan, Yuan He

Institution: Xi’an University of Posts and Telecommunications

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Shanxi Provincial Key Research and Development Project

Award: G4057255342

OpenAlex ID: W4405304952

FWCI:

Cites: 12

Cited by:

Related to: 10