Work

Back Gate Controlled Pseudo-P-Channel GaN HFET

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779638

Authors: Li Guan, Qi Li, Lanyi Liang, Lei Wang, Xin Zhang, Haiou Li

Institution: Guilin University of Electronic Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405305073

FWCI:

Cites: 23

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Related to: 10