Work

Effect of Incident Energy on Deposition of Ge0.2Si0.8 Films on Ge Substrate: A Molecular Dynamics Study

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779615

Authors: Chaoyang Xie, Tao Lin, Duo Liang, Haoxiang Huang, Jiale Dang, Jianan Xie

Institution: Xi'an University of Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405305372

FWCI:

Cites: 12

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Related to: 10