Work

Study of Influence of HTGB and HTRB Tests on Parameters of 1200V SiC MOSFETs

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779939

Authors: Haoran Zhao, Jie Tian, Rui Li, Pan Geng, Hai Lin, Qing Guo, Kuang Sheng

Institutions: Zhejiang University, Wuhan Ship Development & Design Institute

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405305753

FWCI: 2.336

Cites: 7

Cited by: 3

Related to: 10