Work

A Design Method to Enhance the Short-Circuit ability of Planar Gate SiC MOSFET

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779927

Authors: Yanpeng Zhang, Yanfei Zhang, Ge Zhao, Xiaoxia Wen, Mengxin Liu, Kai Sun

Institution: University of Chinese Academy of Sciences

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405305759

FWCI:

Cites: 9

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Related to: 10