Work

Research on Breakdown Mechanism and Characteristics of 4H-SiC BJT with Trench-JTE Composite Termination

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779660

Authors: Zhiwei Guo, Cailin Wang, Lei Guan, Wuhua Yang

Institution: Xi'an University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405305772

FWCI:

Cites: 4

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Related to: 10