Work

A Low Switching Loss 4H-SiC Superjunction MOSFET Design

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779940

Authors: Shiguang Shang, Yuan He, Haoran Wu, XinKai Chen

Institution: Xi’an University of Posts and Telecommunications

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4405306158

FWCI: 1.557

Cites: 15

Cited by: 2

Related to: 10