Work

High-Performance Two-Port SRAM Design and Optimization Based on 12nm Technology

Year: 2024

Type: conference-paper

Source: International Symposium on Semiconductor and Electronic Technology (ISSET)

DOI: 10.1109/isset62871.2024.10779670

Authors: Xiangyu Kong, Yicheng Zhu, Lijun Zhang, Dongdong Xie

Institution: Soochow University

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4405306246

FWCI: 0.806

Cites: 7

Cited by: 1

Related to: 10