Work

Intrinsic Out‐Of‐Plane and In‐Plane Ferroelectricity in 2D AgCrS 2 with High Curie Temperature (Adv. Mater. 50/2024)

Year: 2024

Type: article

Abstract: 2D Ferroelectric Memory In article number 2407655, Hua Xu and coworkers present a novel 2D ferroelectric material AgCrS2 synthesized by chemical vapor deposition growth. The 2D AgCrS2 crystal displays robust ferroelectric polarization in both in-plane and out-of-plane directions with strong intercorrelation and high Curie temperature (682 K). Consequently, the 2D AgCrS2 crystal is successfully utilized to construct ferroelectric memory device, demonstrating significant potential for advancing the development of future artificial intelligence (AI).

Source: Advanced Materials

DOI: 10.1002/adma.202470396

Authors: Jiabao Xing, Yue Tang, Jiaxin Li, Changwei Wu, Yiru Gu, Xiaobo Li, Hu Zhang, Mingwen Zhang, Xiao Wang, Xing Zhou, Xuetao Gan, Di Wu, Jinghui Zeng, Tianyou Zhai, Hua Xu

Institutions: Shaanxi Normal University, Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Xidian University, Northwestern Polytechnical University, State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4405324664

FWCI: 0.308

Cites:

Cited by: 3

Related to: 10