Work

Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/Ga 2 SSe heterostructures: a first-principles study

Year: 2024

Type: article

Abstract: In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/Ga 2 SSe heterostructures using first-principles calculations.

Source: Nanoscale Advances

DOI: 10.1039/d4na00830h

Authors: Nguyen V. Vinh, D. V. Lu, K. D. Pham

Institutions: Ho Chi Minh City University of Economics and Finance, Trường Đại học Sư phạm – Đại học Đà Nẵng, Duy Tan University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

Funder: Bộ Giáo dục và Ðào tạo

Awards: G2502136881, G829659265

OpenAlex ID: W4405332351

FWCI: 0.284

Cites: 66

Cited by: 3

Related to: 10