Ultra-rapid cooling in the millisecond timescale for the enhancement of polarization properties in Al:HfO2 thin films using flash lamp annealing
Year: 2024
Type: article
Abstract: Superior ferroelectric properties of Al-doped HfO2 (HAO) thin films are demonstrated using flash lamp annealing (FLA). This annealing approach is a low-thermal-budget treatment that features short annealing times at the millisecond timescale. We first clarified the annealing conditions with respect to optimum ferroelectricity. The results show that 5-millisecond annealing at 1000 °C is sufficient for adequate crystallization, achieving a high 2Pr value of 17.3 μC cm−2. By adjusting the cooling rate on the millisecond timescale during crystallization annealing, a high cooling rate of 182 °C ms−1 exhibited a superior 2Pr value of 16.6 μC cm−2, in contrast to a slow cooling rate of 12 °C ms−1, which yielded a 2Pr value of 10.2 μC cm−2. The results indicate that the control of the cooling rate is crucial for achieving an optimum 2Pr value, illustrating the potential of FLA for forming high-quality ferroelectric thin films.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W4405357437