Work

Electrothermal Analysis for Layout Design of Hetero-Integrated β-Ga2O3 SBDs on SiC

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3512483

Authors: Yinfei Xie, Yang He, Zhenghao Shen, Zhenyu Qu, Weiye Liu, Wenhui Xu, Tiangui You, Xin Ou, Huarui Sun

Institutions: Harbin Institute of Technology, Ministry of Industry and Information Technology, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Guangdong Science and Technology Department, Shanghai Rising-Star Program, Open Research Fund of State Key Laboratory of Bioelectronics, Shenzhen Science and Technology Innovation Program

Awards: G1047072850, G4325047461, G4390920951, G60704672, G6151194000, G6581053894

OpenAlex ID: W4405361095

FWCI: 0.156

Cites: 38

Cited by: 2

Related to: 10