MOSFET electron mobility enhancement using source/drain recess
Year: 2024
Type: conference-paper
Authors: L. Antunes, P. Devoge, P. Masson, J. Amouroux, J. Dura, C. Rivero, F. Julien
Institutions: STMicroelectronics (France), Université Côte d'Azur
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4405362277