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Uniformity, Linearity, and Symmetry Enhancement in TiO x /MoS 2– x O x Based Analog RRAM via S-Vacancy Confined Nanofilament

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Year: 2024
Type: article
Source: Nano Letters
DOI: 10.1021/acs.nanolett.4c04434
Authors: Dongdong Sun, Xudong Zhu, Shaochuan Chen, Haotian Fang, Guixu Zhu, Gongpeng Lan, Lixin He, Yuanyuan Shi
Institutions: University of Science and Technology of China, CAS Key Laboratory of Quantum Information, USTC, RWTH Aachen University
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Anhui Postdoctoral Science Foundation
Awards: G2827756727, G5664694892, G6250208815, G8188182948, G8837545646
OpenAlex ID: W4405371148
FWCI: 2.359
Cites: 60
Cited by: 23
Related to: 10
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