Work

Exploring p -Type Contact for Monolayer WS 2 FETs Using Halogen Doping and Intermediate Layers

Year: 2024

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide This work presents a density functional theory (DFT) study of substitutional and adsorption-based halogen (I or F) doping of WS 2 -based transistors to enhance their contact properties. Substitutional doping of the WS 2 monolayer with halogens results in n -type behavior, while halogen adsorption on the surface of the WS 2 monolayer induces p -type behavior. This is attributed to differing directions of charge flow, as supported by the Mulliken analysis. However, due to Fermi-level pinning (FLP) at the WS 2 -metal interface, the p -type behavior resulting from halogen adsorption is not very prominent. To achieve better p -type contact, intermediate layers of graphene and h-BN are used to mitigate the FLP effect, showing significant improvement. The F-adsorbed WS 2 -graphene-Pt interface demonstrates excellent p -type contact with a substantial reduction in the hole Schottky barrier height, making it ideal for efficient WS 2 -based p -type MOS transistors in CMOS technology.

Source: ACS Omega

DOI: 10.1021/acsomega.4c08463

Authors: D Sharda Devi, Nihar R. Mohapatra

Institution: Indian Institute of Technology Gandhinagar

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,935

Funder: Ministry of Education, India