Work

Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices

Year: 2024

Type: conference-paper

Source: HAL

Authors: Gavalas, Michalis, Mercier, Frédéric, Blanquet, E., Zekentes, Konstantinos

Institutions: Science et Ingénierie des Matériaux et Procédés, FORTH Institute of Electronic Structure and Laser, Foundation for Research and Technology Hellas

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405416520

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Related to: 10