Work

A silicon-based InGaN/GaN microbelt blue light-emitting-diode fabricated via low-temperature direct bonding

Year: 2024

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/d4tc03237c

Authors: Hui Wang, Peishan Li, Zexin Dong, Yuqing Yang, Huan Chang, Chenguang He, Qiao Wang, Zhitao Chen, Kang Zhang, Xingfu Wang

Institutions: South China Normal University, University of Electronic Science and Technology of China, Guangdong Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G3447420425, G4451537539, G4577625770, G4860619083, G7744059928

OpenAlex ID: W4405416703

FWCI: 0.149

Cites: 38

Cited by: 1

Related to: 10