High-performance self-rectifying memristor array based on Pt/HfO 2/Ta 2O 5− x /Ti structure for flexible electronics
Year: 2024
Type: article
Abstract: Self-rectifying memristor (SRM) arrays hold tremendous potential in high-density data storage and energy-efficient neuromorphic computing. However, SRM arrays are mostly developed on rigid substrates and lack mechanical flexibility, limiting their applications in intelligent electronic skin, wearable technologies, etc. Here, we present a high-performance SRM array based on Pt/HfO2/Ta2O5−x/Ti heterojunctions, which can be fabricated on a flexible polyimides (PI) substrate and demonstrates exceptional memristive performance under bending conditions (bending radius (R) = 1 cm, rectifying ratio > 104, retention time > 104 s and endurance > 105 cycles). We demonstrate a 16 × 16 flexible memristor array offering noise filtering and data storage capabilities, which can be used to accurately process and store the signals transmitted by a pressure sensor array. This research represents an important advancement towards the realization of next-generation high-performance flexible electronics.
Source: Nano Research
Authors: Shang He, Xiaoyu Ye, Xiaojian Zhu, Qing Zhong, Yulin Liu, Gang Li, Rui Liu, Xiaohan Meng, Yongguang Xiao, Shaoan Yan, Minghua Tang
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $5,290
OpenAlex ID: W4405417145