Normally-Off Trench-Gated AlGaN/GaN Current Aperture Vertical Electron Transistor with Double Superjunction
Year: 2024
Type: article
Abstract: This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD) Silvaco Atlas simulation. An additional p-pillar was formed beneath the gate current blocking layer to create a lateral depletion region that provided a high off-state breakdown voltage. To address the tradeoff between the drain current and off-state breakdown voltage, the key design parameters were carefully optimized. The proposed device exhibited a higher off-state breakdown voltage (2933 V) than the device with a single SJ (2786 V), although the specific on-resistance of the proposed method (1.29 mΩ·cm−2) was slightly higher than that of the single SJ device (1.17 mΩ·cm−2). In addition, the reverse transfer capacitance was improved by 15.6% in the proposed device.
Source: Technologies
Authors: Jong-Uk Kim, Do-Yeon Park, Byeong-Jun Park, Sung-Ho Hahm
Institution: Kyungpook National University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,819
OpenAlex ID: W4405424814