Work

Analysis of Gate-voltage Dependence of RF Inductive Effect Parameters in Equivalent Circuit for Floating Body PD-SOI MOSFETs

Year: 2024

Type: article

Source: Journal of the Institute of Electronics and Information Engineers

DOI: 10.5573/ieie.2024.61.11.164

Authors: Wongi Cho, Seonghearn Lee

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405437644

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