Work

Tellurium/GaAs heterojunctions fabricated by thermal evaporation in vacuum

Year: 2024

Type: article

Abstract: Heterostructures containing thin tellurium layers thermally evaporated on differently doped GaAs substrates were systematically investigated by using THz pulse excitation spectroscopy. The observed differences of the THz excitation spectra were explained by the details of the energy band lineups in the heterostructures. Comparison of the simulation results of the heterojunction between tellurium and semi-insulating GaAs with the measured THz pulse emission spectrum allowed one to estimate the electron affinity in the tellurium layer. In addition, a near-infrared photodetector based on the Te heterojunction with n-type GaAs was demonstrated.

Source: Lithuanian Journal of Physics

DOI: 10.3952/physics.2024.64.4.4

Authors: Vaidas Pačebutas, Ričardas Norkus, Andrejus Geižutis, Viktorija Strazdienė, Arūnas Krotkus

Institutions: Center for Physical Sciences and Technology, Vilnius University

Language: English

Topic: Terahertz technology and applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funder: Lietuvos Mokslo Taryba

Award: G5980146441