Work

Thermal excitation of carriers at tail states and recombination rate in hydrogenated amorphous silicon

Year: 2024

Type: article

Abstract: Measurements of low-energy photoluminescence (PL) in hydrogenated amorphous silicon (a-Si:H) have been performed by means of frequency-resolved spectroscopy. Temperature variation of radiative recombination rate of electron–hole pairs and thermal excitation of carriers at the tail states are discussed. The results suggest that the tail electrons do not contribute to the PL of the energy lower than 1.0 eV. Experimental results are quantitatively explained by considering a two-level system instead of the tail states.

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1007/s10854-024-14062-6

Author: Chisato Ogihara

Institution: Yamaguchi University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,690

OpenAlex ID: W4405515502