Work

Impact of Density of States on the Characteristics of Channel-All-Around InGaZnO Field-Effect Transistors

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3515958

Authors: Kunlin Cai, Yuan Li, Guangzheng Yi, Guanhua Yang, Di Geng, Ling Li, Jun Yu, Arokia Nathan

Institutions: Shandong University, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Major Scientific and Technological Innovation Project of Shandong Province, National Key Research and Development Program of China

Awards: G3654202410, G4265394226, G7126514713, G8437934731, G8460312636

OpenAlex ID: W4405517525

FWCI: 0.308

Cites: 35

Cited by: 3

Related to: 10