Work

Damage Effect and Mechanism of p-GaN High-Electron-Mobility Transistors in HIRF Environment

Year: 2024

Type: article

Source: IEEE Sensors Journal

DOI: 10.1109/jsen.2024.3516543

Authors: Zhenyang Ma, Dexu Liu, Zhaobin Duan, Yicheng Li, Jiahao Liu, Meng Xie

Institution: Civil Aviation University of China

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Science and Technology Bureau of Zhenjiang, Fundamental Research Funds for the Central Universities

Awards: G1999334301, G837157070

OpenAlex ID: W4405520686

FWCI: 0.433

Cites: 33

Cited by: 3

Related to: 10