Design of junction temperature measurement system for SiC MOSFET based on gate peak current
Year: 2024
Type: conference-paper
Source: IET conference proceedings.
Authors: Yang Wen, Chong Zhang
Institution: Xi'an University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4405547003