Work

Junction temperature measurement method for SiC MOSFETs based on gate internal resistance

Year: 2024

Type: conference-paper

Source: IET conference proceedings.

DOI: 10.1049/icp.2024.4079

Authors: Yang Wen, Chong Zhang, Mao Li

Institution: Xi'an University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405547038

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