Work

The DC and trapping analysis of Fe-doping tail effects on the GaN-based HEMTs

Year: 2024

Type: conference-paper

Source: IET conference proceedings.

DOI: 10.1049/icp.2024.4085

Authors: Xuan Su, Wen-Ze Gao, Ling Yang, Qing Zhu, Hao Lu, Qian Yu

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405547074

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