Work

Electrical and structural analysis of GaN/ZnO/Ga2O3 bonded interfaces; observation of spinel ZnGa2O4 after annealing

Year: 2024

Type: article

Abstract: The process of wafer bonding β-Ga2O3 and N-polar GaN with a ZnO “glue layer” was optimized to reduce resistance at the bonded interface. The GaN/ZnO and Ga2O3/ZnO interfaces were studied using TEM, with a focus on the effect of annealing on the ZnO. The thickness of the ZnO “glue layer” was studied to find the optimal behavior and minimum resistance at the interface, with 5 nm determined to give ohmic behavior with resistance lower than the measurement setup could characterize. TEM analysis revealed that the GaN/ZnO interface was sharp before and after annealing, whereas the Ga2O3/ZnO sample had a ZnGa2O4 interlayer that crystallized upon annealing, matching its crystal orientation to the substrate.

Source: Journal of Applied Physics

DOI: 10.1063/5.0232477

Authors: Stefan Kosanovic, Kai Sun, Ashley Jian, Xin Zhai, Umesh Mishra, Elaheh Ahmadi

Institutions: University of California, Los Angeles, University of Michigan, University of California, Santa Barbara

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funders: University of Michigan, Defense Advanced Research Projects Agency, Defense Sciences Office, DARPA