Year: 2024
Type: article
Abstract: In 3D NAND, channel current sensing deteriorates as the number of stacked layers increases due to the granular nature of the polysilicon channel. Recent studies on 2D materials like MoS2 have demonstrated its exceptional channel material properties, including high mobility and no interfacial dangling bonds. We incorporate MoS2 as the channel material in 3D NAND, demonstrating better cell current and lower subthreshold slope than conventional polysilicon channels to overcome the low channel current in 3D NAND. The scaling performance of the MoS2 channel device shows the gate and spacer lengths can be scaled down to 10 nm without degrading the program and erasing performance. Additionally, MoS2-based channel NAND suppresses WL interference by reducing threshold voltage shifts of the cells adjacent to the program cells. These results show MoS2 as a promising alternative channel material for 3D NAND, offering enhanced bit density growth and overall performance in flash memory applications.
Authors: Mohd Ashraf Lone, Dibyadrasta Sahoo, Imtiyaz Ahmad Khan, Sanjeev Kumar Manhas
Institution: Indian Institute of Technology Roorkee
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W4405587479