Fully-Vertical GaN-on-SiC Trench MOSFETs
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Authors: Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau
Institution: Hong Kong University of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Innovation and Technology Fund
OpenAlex ID: W4405600477