Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Authors: Zhenjie Zheng, Yaoping Lu, Jiachang Zhuang, Lemin Jia, Shoudong Zhu, Duanyang Chen, Hongji Qi, Titao Li, Haizhong Zhang, Xiaoqiang Lu
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G1751233889, G8373469476
OpenAlex ID: W4405600648