Effectiveness of NIEL as a Predictor of Single-Event Displacement Damage Effects in CMOS Circuits
Year: 2024
Type: article
Abstract: Single-event displacement damage (SEDD) effects are a rising concern in modern technology nodes with small feature sizes. A model is developed using existing displacement damage (DD) data to calculate SEDD cross sections as a function of nonionizing energy deposition. This model is validated against existing data. Results of the model are used to demonstrate the effectiveness of nonionizing energy loss (NIEL) as a figure of merit (FOM) for predicting SEDD effects, analogous to the use of linear energy transfer (LET) for single-event effects (SEEs). Rate predictions of SEDD are performed for representative orbits. A method based on using NIEL as an FOM is found to reasonably and conservatively predict on-orbit SEDD rates predicted by direct calculation using the model. Implications for SEDD hardness assurance are discussed.
Institution: Vanderbilt University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,495
Funder: Defense Threat Reduction Agency
Awards: G1676837604, G772299097, G931310594
OpenAlex ID: W4405601220