Work

The Impact of Gate Resistance of IGBT and SiC MOSFET on the Dynamic Parameters of Si/SiC Hybrid Devices

Year: 2024

Type: conference-paper

Source: International Conference on Power and Energy Applications (ICPEA)

DOI: 10.1109/icpea63589.2024.10785246

Author: Keling Song

Institution: China North Industries Group Corporation (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4405601712

FWCI:

Cites: 20

Cited by:

Related to: 10