On-Wafer R ON Degradation Analysis of 100 V p-GaN HEMTs Emulating Low- and High-Side Operation in Half Bridge Circuits
Year: 2024
Type: conference-paper
Abstract: We developed a custom setup for the on-wafer dynamic$R$ONevaluation of 100 V p-GaN HEMTs emulating low- (LS) and high-side (HS) operation in integrated half-bridge circuits. We found that RON degradation is more pronounced in HS configuration compared to the LS one, while similar time constants and activation energies were extracted. This suggests that the underlying physical mechanism is the same in both cases, i.e., hole emission from C-related acceptors in the GaN buffer. Numerical device simulations were carried out to explain the different degree of$R$ONdegradation in LS and HS operation.
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4405601882