Work

Analysis of the Switching Behavior of Gate Oxide Degradation for SiC MOSFETs in a Phase-Leg Configuration

Year: 2024

Type: conference-paper

Source: International Conference on Power and Energy Applications (ICPEA)

DOI: 10.1109/icpea63589.2024.10784554

Authors: Binbing Wu, Li Ran, Hongyu Lin, Jiaming Xie, Hao Feng

Institutions: Chongqing University, University of Warwick

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405601903

FWCI:

Cites: 7

Cited by:

Related to: 10