Year: 2024
Type: conference-paper
Abstract: This paper reports on the characterization of optical and electrical properties of aluminum nitride (AlN) thin films, achieved by varying the$N_{2}/Ar$gas ratio during the sputtering process. Our findings reveal that AlN thin films can attain superior optical transmission in the visible spectrum compared to glass substrates, particularly at an optimal$N_{2}/Ar$ratio. Additionally, we observed that the dielectric strength and breakdown voltage of the films improve as the$N_{2}/Ar$ratio decreases, reaching a dielectric strength of approximately 4.5× 105V/mm under optimized conditions. The study also demonstrates an increase in capacitance with higher applied DC voltage, attributed to the piezoelectric properties of AlN. These results highlight the potential of AlN thin films for applications in dielectric layers for power capacitors and gate materials in thin-film transistors.
Authors: Renjun Liu, Chandra Kant, Diyar Mousa Othman, David Macdonald, Serena Nur Erkizan, William Solari, Hong Ji, Ingo Ludtke, Wenlong Ming, Bo Hou
Institution: Cardiff University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4405601958