Work

Monolithically Integrated Two-Stage GaN Gate Drivers

Year: 2024

Type: conference-paper

DOI: 10.1109/wipdaeurope62087.2024.10797450

Authors: Michael Basler, Richard Reiner, Stefan Mönch, Daniel Grieshaber, Fouad Benkhelifa, Rüdiger Quay

Institution: Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405602064

FWCI: 1.159

Cites: 12

Cited by: 1

Related to: 10