The Impact of Varying the High-Temperature Post-Deposition Anneal Time or Temperature Ramp Rates on ALD-SiO2/4H-SiC Interfaces
Year: 2024
Type: conference-paper
Authors: X. Tian, A. B. Renz, A. Su, N. S. Agbo, P. Taylor, P. A. Mawby, P. M. Gammon
Institutions: University of Warwick, Dynex Semiconductor (United Kingdom)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G3398399016
OpenAlex ID: W4405602272