Work

Self-Heating and Hotspots in GaN HEMTs with Conventional and T-Shape Gates

Year: 2024

Type: conference-paper

DOI: 10.1109/wipdaeurope62087.2024.10797221

Authors: B. Ubochi, K. Ahmeda, M. Elksne, B. Benbakhti, A. Al-Khalidi, E. Wasige, K. Kalna

Institutions: Federal University of Technology, Dynex Semiconductor (United Kingdom), University of Glasgow, Liverpool John Moores University, Swansea University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405602339

FWCI:

Cites: 24

Cited by:

Related to: 10