Work

Comparative Analysis of the Characteristics of Schottky-Type and Ohmic-Type p-GaN Gate GaN HEMTs

Year: 2024

Type: conference-paper

DOI: 10.1109/wipdaeurope62087.2024.10797228

Authors: Xiaomeng Geng, Nick Wieczorek, Benedikt Kohlhepp, Sibylle Dieckerhoff

Institution: Technische Universität Berlin

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405602502

FWCI: 3.623

Cites: 12

Cited by: 3

Related to: 10