Work

Characterization and reuse of SiC flakes generated during electrochemical etching of 4H-SiC wafers

Year: 2024

Type: article

Abstract: Silicon carbide porous flakes are produced during the electrochemical etching (ECE) of n-doped 4H-SiC wafers. The differences in porosity between the Si-face and C-face allow for the adsorption of various dyes.

Source: Journal of Materials Chemistry A

DOI: 10.1039/d4ta07035f

Authors: Matteo Barcellona, Vanessa Spanò, Roberto Fiorenza, Salvatore Scirè, Thomas Defforge, Gaël Gautier, Maria Elena Fragalà

Institutions: University of Catania, Université de Tours, Centre National de la Recherche Scientifique, Institut National des Sciences Appliquées Centre Val de Loire, GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4405613684

FWCI: 0.473

Cites: 66

Cited by: 5

Related to: 10