Multilevel Nonvolatile Resistive Switching in Bionic-Inorganic Stacked Structure with Artificial Synapses and Its Light-Controlled Writing Application
Year: 2024
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide This study successfully fabricated memory with biological synapse behavior and light writing by adding an Al 2 O 3 layer and NiO nanoparticles (NPs). Various synaptic characteristics, such as long-term potentiation, long-term depression, and paired-pulse facilitation, were stimulated, promoting uniform changes in electrical conductivity with cycling. Simultaneously, given the multilayer structure of the Al/konjac glucomannan (KGM)/Al 2 O 3 /KGM/ITO structure, carbon and oxygen vacancy filaments achieved multilayer data storage. Incorporating NiO NPs into the KGM film in the same structure significantly enhanced photoluminescence and realized optical-programmed resistive conversion behaviors. The device incorporating the NiO NPs exhibited data retention time exceeding 10 4 s and can maintain an On/Off ratio of 10 4 at room temperature after 90 days, indicating its considerable stability under long-term operating conditions. Therefore, the multilayer stacked KGM resistive memory reported herein can be utilized for bioinspired synaptic emulation applications and effectively transmit optically written messages, providing a promising approach for designing new types of optical memories for fabrication.
Source: ACS Applied Electronic Materials
Authors: Yu-Chi Chang, Hao-Jung Liu, Hui-Shin Huang
Institution: National Cheng Kung University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Award: G7862819274
OpenAlex ID: W4405617197