Selective Etching of SiO2 by Radical Recombination through NF3/H2 Pulsed RF Plasma
Year: 2024
Type: article
Source: ACS Applied Electronic Materials
Authors: Dae Whan Kim, Hong Seong Gil, Woo Chang Park, Ji Yeon Lee, Doo San Kim, Yun Jong Jang, Kyoung Chan Kim, Do Seong Pyun, Ju Young Kim, Yongil Kim, Geun Young Yeom
Institution: Sungkyunkwan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G6206658229
OpenAlex ID: W4405631022